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| UTC 2SA733 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is an low frequency amplifier. 1 FEATURES *Collector-Emitter voltage: BVCBO=-50V *Collector current up to -150mA *High hFE linearity *Complimentary to 2SC945 TO-92 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation(Ta=25C) Collector Current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Ic Tj TSTG VALUE -60 -50 -5 250 -150 125 -55 ~ +150 UNIT V V V mW mA C C ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain(note) Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure SYMBOL BVCBO BVCEO ICBO IEBO hFE1 VCE(sat) fT Cob NF TEST CONDITIONS Ic=-100A, IE=0 IC=-10mA,IB=0 VCB=-40V,IE=0 VEB=-3V,Ic=0 VCE=-6V,Ic=-1mA Ic=-100mA,IB=-10mA VCE=-10V,Ic=-50mA VCB=-10V,IE=0,f=1MHz Ic=-0.1mA,VCE=-6V RG=10k,f=100Hz MIN -60 -50 TYP MAX UNIT V V nA nA 90 -0.1 190 2.0 4.0 -100 -100 600 -0.3 3.0 6.0 100 V MHz pF dB UTC UNISONIC TECHNOLOGIES CO. LTD 1 UTC 2SA733 RANK RANGE NPN EPITAXIAL SILICON TRANSISTOR R 90-180 Q 135-270 P 200-400 K 300-600 CLASSIFICATION OF hFE TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 Static characteristics -100 3 10 Fig.2 DC current Gain 2 10 Fig.3 Base-Emitter on Voltage VCE=-6V Ic,Collector current (mA) Ic,Collector current (mA) -80 HFE, DC current Gain IB= -300 A -60 2 10 1 10 VCE=-6V IB= -250 A IB= -200A IB= -150A -40 1 10 0 10 -20 IB= -100 A IB= -50 A 0 0 -4 -8 -12 -16 -20 0 10 -1 10 0 10 1 10 2 10 3 10 -1 10 0 -0.2 -0.4 -0.6 -0.8 -1.0 Collector-Emitter voltage ( V) Ic,Collector current (mA) Base-Emitter voltage (V) Fig.4 Saturation voltage 4 10 3 10 Fig.5 Current gain-bandwidth product 2 10 Fig.6 Collector output Capacitance Ic=10*I B Current Gain-bandwidth product,f T(MHz) Saturation voltage (MV) VCE=-6V 2 10 Cob,Capacitance (pF) 3 10 VBE(sat) 1 10 f=1MHz IE=0 2 10 VCE(sat) 1 10 0 10 1 10 -1 10 0 10 1 10 2 10 3 10 0 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 10 Ic,Collector current (mA) Ic,Collector current (mA) Collector-Base voltage (V) UTC UNISONIC TECHNOLOGIES CO. LTD 2 |
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